Imaging scarred states in quantum dots

被引：12

作者：

Burke, A. M. ^{[1
,2
]}

Akis, R. ^{[1
,2
]}

Day, T. ^{[1
,2
]}

Speyer, G. ^{[1
,2
]}

Ferry, D. K. ^{[1
,2
,3
]}

Bennett, B. R. ^{[4
]}

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[3] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[4] USN, Res Lab, Washington, DC 20375 USA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2009年 / 21卷 / 21期

关键词：

COHERENT ELECTRON FLOW; GATE MICROSCOPY; FLUCTUATIONS; EINSELECTION;

D O I：

10.1088/0953-8984/21/21/212201

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have used the scanning gate microscopy technique to image scar structures in an open quantum dot, fabricated in an InAs quantum well and defined by electron beam lithography. These are shown to have a periodicity in magnetic field that correlates with that found in the conductance fluctuations. Simulations have shown that these magnetic transform images bear a strong resemblance to actual scars found in the dots.

引用

页数：5

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