Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells

被引：8
|
作者：
Chang, YM [1 ]
Lin, HH
Chia, CT
Chen, YF
机构：
[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10673, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10673, Taiwan
[3] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan
[4] Natl Taiwan Univ, Dept Phys, Taipei 10673, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 14期
关键词：
D O I：
10.1063/1.1704859
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Coherent phonon spectroscopy of GaInP/GaAs/GaInP single quantum wells is demonstrated with time-resolved second-harmonic generation. Coherent longitudinal optical phonons are impulsively launched via transient pump-induced field screening and stimulated Raman scattering in the well and barrier regions. A phonon mode at 9.4 THz is identified as interfacial phonon localized in the GaAs/GaInP hetero-interface. The free induced dephasing of this coherent interfacial phonon is analyzed with window-gated Fourier transform. Its dephasing time is used to characterize the interface quality of semiconductor heterostructures. (C) 2004 American Institute of Physics.
引用
收藏
页码：2548 / 2550
页数：3
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