Current induced perpendicular-magnetic-anisotropy racetrack memory with magnetic field assistance

被引：14
|
作者：
Zhang, Y. [1 ,2 ]
Zhao, W. S. [1 ,2 ,3 ]
Klein, J-O [1 ,2 ]
Chappert, C. [1 ,2 ]
Ravelosona, D. [1 ,2 ]
机构：
[1] Univ Paris Sud, IEF, F-91405 Orsay, France
[2] CNRS, UMR8622, F-91405 Orsay, France
[3] Beihang Univ, Elect & Informat Engn Sch, Beijing 100191, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 03期
关键词：
DOMAIN-WALL MOTION;
D O I：
10.1063/1.4863081
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High current density is indispensable to shift domain walls (DWs) in magnetic nanowires, which limits the using of racetrack memory (RM) for low power and high density purposes. In this paper, we present perpendicular-magnetic-anisotropy (PMA) Co/Ni RM with global magnetic field assistance, which lowers the current density for DW motion. By using a compact model of PMA RM and 40 nm design kit, we perform mixed simulation to validate the functionality of this structure and analyze its density potential. Stochastic DW motion behavior has been taken into account and statistical Monte-Carlo simulations are carried out to evaluate its reliability performance. (C) 2014 AIP Publishing LLC.
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页数：5
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