Terahertz pulse generation and detection with LT-GaAs photoconductive antenna

被引：39
|
作者：
Zhang, J [1 ]
Hong, Y
Braunstein, SL
Shore, KA
机构：
[1] Univ Coll N Wales, Sch Informat, Bangor LL57 1UT, Gwynedd, Wales
[2] Shanxi Univ, State Key Lab Quantum Opt & Quantum Opt Devices, Inst Optoelect, Taiyuan 030006, Peoples R China
来源：
IEE PROCEEDINGS-OPTOELECTRONICS | 2004年 / 151卷 / 02期
关键词：
D O I：
10.1049/ip-opt:20040113
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The characteristics of optically induced teraherz (THz) radiation from a biased low-temperature-grown GaAs (LT-GaAs) photoconductive antenna were investigated using a femtosecond Ti:sapphire laser. The THz pulse radiation from two different LT-GaAs photoconductive antennas were compared and two kinds of THz waveform were observed. Saturation behaviour of the emission of THz radiation is observed by using a CW laser diode to optically pre-bias the emitter antenna.
引用
收藏
页码：98 / 101
页数：4
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