A novel route of synthesis of WS2 thin film and its characterization

被引：4
|
作者：
Hankare, P. P. [2 ]
Manikshete, A. H. [3 ]
Sathe, D. J. [1 ]
Chate, P. A. [4 ]
Patil, A. A. [2 ]
Gardkar, K. M. [2 ]
机构：
[1] KITs Coll Engn, Dept Chem, Kolhapur, Maharashtra, India
[2] Shivaji Univ, Dept Chem, Kolhapur 416004, Maharashtra, India
[3] Walchand Coll, Dept Chem, Solapur, Maharashtra, India
[4] JSM Coll, Dept Chem, Alibag, Maharashtra, India
来源：
JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 13期
关键词：
Crystal morphology; X-ray diffraction; Growth from solutions; Polycrystalline deposition; Semiconducting material; CHEMICAL-VAPOR-DEPOSITION; COATINGS;
D O I：
10.1016/j.jcrysgro.2009.04.012
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
WS2 thin films have been deposited by chemical deposition technique using citric acid as a complexing agent at 343 K. X-ray pattern shows that crystalline nature with hexagonal- and orthorhombic-mixed phase. The films show that good optical properties high absorption and band gap value was found to be 1.31 eV. The specific conductivity of the film was found to be in order of 10(-3) (Omega cm)(-1). (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：3386 / 3388
页数：3
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