Resonant tunneling effect of quantum well-superconductor junction

被引：0
|
作者：
Ma, GC
Liu, Y
Dai, XX
机构：
[1] FUDAN UNIV, DEPT PHYS, SHANGHAI 200433, PEOPLES R CHINA
[2] UNIV HOUSTON, TEXAS CTR SUPERCONDUCT, HOUSTON, TX 77204 USA
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 1997年 / 274卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
superconducting junction; quantum well; resonant tunneling;
D O I：
10.1016/S0921-4534(97)80001-9
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper a semiconductor double barrier-quantum well-superconductor (DBQS) junction is proposed and the I-V characteristics was obtained by employing a generalized Giaever formula and Andreev reflection method. The result shows that the I-V curve of DBQS junction exhibits negative differential resistance. It is suggested that this effect can be used to fabricate a new electronic device.
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页码：173 / 179
页数：7
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