Position dependence of charge collection in prototype sensors for the CMS pixel detector

被引：11

作者：

Rohe, T ^{[1
]}

Bortoletto, D

Chiochia, V

Cremaldi, LM

Cucciarelli, S

Dorokhov, A

Konecki, M

Prokofiev, K

Regenfus, C

Sanders, DA

Son, SH

Speer, T

Swartz, M

机构：

[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

[2] Purdue Univ, W Lafayette, IN 47907 USA

[3] Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland

[4] Univ Mississippi, Dept Phys & Astron, University, MS 38677 USA

[5] Univ Basel, Inst Phys, CH-4056 Basel, Switzerland

[6] Johns Hopkins Univ, Baltimore, MD 21218 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 03期

关键词：

charge collection; CMS; LHC; pixel sensor; pixels; p-spray; p-stop; radiation hardness;

D O I：

10.1109/TNS.2004.829487

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluence(1) of I X 10(15) n(eq)/cm(2) at the CERN PS. Afterward, they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a nonzero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.

引用

页码：1150 / 1157

页数：8

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