Research on Effective Moat Configuration for Nb Multi-Layer Device Structure

被引：12

作者：

Fujiwara, Kan ^{[1
]}

Nagasawa, Shuichi ^{[1
]}

Hashimoto, Yoshihito ^{[1
]}

Hidaka, Mutsuo ^{[1
]}

Yoshikawa, Nobuyuki ^{[2
]}

Tanaka, Masamitsu ^{[3
]}

Akaike, Hiroyuki ^{[3
]}

Fujimaki, Akira ^{[3
]}

Takagi, Kazuyoshi ^{[3
]}

Takagi, Naofumi ^{[3
]}

机构：

[1] Int Superconduct Technol Ctr, Superconduct Res Lab, Tsukuba, Ibaraki 3058501, Japan

[2] Yokohama Natl Univ, Hodogaya Ku, Yokohama, Kanagawa 2408501, Japan

[3] Nagoya Univ, Chikkusa Ku, Nagoya, Aichi 4860913, Japan

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2009年 / 19卷 / 03期

关键词：

Cell library; moat; Nb multi-layer device structure; SFQ; superconductive circuits;

D O I：

10.1109/TASC.2009.2018545

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One of the most important obstacles to realize high-end single-flux quantum (SFQ) digital circuits is how to eliminate the effects of trapped magnetic flux. In this study, we investigated various moat structures for multi-layer devices with multiple ground planes to determine which moat configuration was most suitable for a cell library. We designed various test circuits with different moat structures and evaluated their effectiveness by measuring the I-V characteristics of superconducting quantum interface device (SQUID) test circuits. Tests were carried out at several milli-gauss to evaluate the moats. We concluded that the most suitable moat configuration for a multi-layer device structure was obtained by surrounding the SFQ circuits with basic via moats in all ground layers of bias ports with ground contacts and by using narrow rectangular moats in only the main ground plane.

引用

页码：603 / 606

页数：4

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