Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

被引:30
|
作者
Cheng, Lin [1 ]
Palmour, John W. [1 ]
Agarwal, Anant K. [2 ]
Allen, Scott T. [1 ]
Brunt, Edward V. [1 ]
Wang, Gangyao [1 ]
Pala, Vipindas [1 ]
Sung, Woongje [3 ]
Huang, Alex Q. [3 ]
O'Loughlin, Michael [1 ]
Burk, Albert [1 ]
Grider, Dave [1 ]
Scozzie, Charles [4 ]
机构
[1] Cree Inc, 4600 Silicon Dr, Durham, NC 27703 USA
[2] Dept Energy, Washington, DC USA
[3] North Carolina State Univ, Future Renewable Elect Energy Delivery & Manageme, Durham, NC USA
[4] US Army, Res Lab, Adelphi, MD USA
关键词
Silicon Carbide; High Voltage; MOSFET; GTO; IGBT; Power Diode; Medium-Voltage Drive; Variable Speed Drive; renewable energy conversion; power grid; pulsed power; 1 CM(2); KV;
D O I
10.4028/www.scientific.net/MSF.778-780.1089
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Advanced high-voltage (>= 10 kV) silicon carbide (SiC) devices described in this paper have the potential to significantly impact the system size, weight, high-temperature reliability, and cost of modern variable-speed medium-voltage (MV) systems such as variable speed (VSD) drives for electric motors, integration of renewable energy including energy storage, micro-grids, and compact pulsed power systems. In this paper, we review the current status of the development of 10 kV - 20 kV class power devices in SiC, including MOSFETs, JBS diodes, IGBTs, GTO thyristors, and PiN diodes at Cree. Advantages and weakness of each device are discussed and compared. A strategy for high-voltage SiC power device development is proposed.
引用
收藏
页码:1089 / +
页数:2
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