Angular dependence of anisotropic magnetoresistance in magnetic systems

被引:28
|
作者
Zhang, Steven S. -L. [1 ]
Zhang, Shufeng [1 ]
机构
[1] Univ Arizona, Dept Phys, Tucson, AZ 85721 USA
关键词
ALLOYS;
D O I
10.1063/1.4855935
中图分类号
O59 [应用物理学];
学科分类号
摘要
Anisotropic magnetoresistance (AMR), whose physical origin is attributed to the combination of spin dependent scattering and spin orbital coupling (SOC), usually displays simple angular dependence for polycrystalline ferromagnetic metals. By including generic spin dependent scattering and spin Hall (SH) terms in the Ohm's law, we explicitly show that various magneto-transport phenomena such as anomalous Hall (AH), SH, planar Hall (PH) and AMR could be quantitatively related for bulk polycrystalline ferromagnetic metals. We also discuss how AMR angular dependence is affected by the presence of interfacial SOC in magnetic layered structure. (C) 2014 AIP Publishing LLC.
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页数:3
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