Tunneling-Based Cellular Nonlinear Network Architectures for Image Processing

被引:36
|
作者
Mazumder, Pinaki [1 ]
Li, Sing-Rong [1 ]
Ebong, Idongesit E. [1 ]
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
关键词
Resonant tunneling diode (RTD); cellular neural/nonlinear network (CNN); full array simulation; settling time analysis; NEURAL-NETWORKS; CIRCUITS; DIODES;
D O I
10.1109/TVLSI.2009.2014771
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The resonant tunneling diode (RTD) has found numerous applications in high-speed digital and analog circuits due to the key advantages associated with its folded back negative differential resistance (NDR) current-voltage (I-V) characteristics as well as its extremely small switching capacitance. Recently, the RTD has also been employed to implement high-speed and compact cellular neural/nonlinear networks (CNNs) by exploiting its quantum tunneling induced nonlinearity and symmetrical I-V characteristics for both positive and negative voltages applied across the anode and cathode terminals of the RTD. This paper proposes an RTD-based CNN architecture and investigates its operation through driving-point-plot analysis, stability and settling time study, and circuit simulation. Full-array simulation of a 128 x 128 RTD-based CNN for several image processing functions is performed using the Quantum Spice simulator designed at the University of Michigan, where the RTD is represented in SPICE simulator by a physics based model derived by solving Schrodinger's and Poisson's equations self-consistently. A comparative study between different CNN implementations reveals that the RTD-based CNN can be designed superior to conventional CMOS technologies in terms of integration density, operating speed, and functionality.
引用
收藏
页码:487 / 495
页数:9
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