MCT infrared photodiodes on the basis of graded gap P-p heterojunction grown by MBE HgCdTe epilayers on GaAs

被引：1

作者：

Vasiliev, V. V. ^{[1
]}

Remesnik, V. G. ^{[1
]}

Dvoretsky, S. A. ^{[1
]}

Varavin, V. S. ^{[1
]}

Mikhailov, N. N. ^{[1
]}

Sidorov, Yu. G. ^{[1
]}

Suslyakov, A. O. ^{[1
]}

Aseev, A. L. ^{[1
]}

机构：

[1] SB RAS, Inst Semicond Phys, Pr Lavrenteva 13, Novosibirsk 630090, Russia

来源：

OPTICAL SENSING II | 2006年 / 6189卷

关键词：

graded gap layers; heterojunction; MCT; photodiodes; FPA;

D O I：

10.1117/12.663506

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The measurement signal (S) to noise (N) ratio (S/N) of novel 128x128 FPA in temperature range 77 -130K was carried out. FPA for spectral range 8-12 mu m was fabricated by B+ implantation process into graded MCT P-p heterojunction with potential barrier. MCT P-p heterojunction with specific MCT composition throughout the thickness was grown by MBE on GaAs substrate by ellipsometric control in situ. The potential barrier was determined by the difference of MCT composition at absorber and p-n junction location layers and equal to Delta X-CdTe = 0,025. It was shown that based on P-p heterojunction FPA operated temperature and wavelength increases over routine one without P-p heterojunction.

引用

页数：5

共 31 条

[21] Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm
Varavin, V. S.
Sabinina, I., V
Sidorov, G. Yu
Marin, D., V
Remesnik, V. G.
Predein, A., V
Dvoretsky, S. A.
Vasilyev, V. V.
Sidorov, Yu G.
Yakushev, M., V
Latyshev, A., V
INFRARED PHYSICS & TECHNOLOGY, 2020, 105
[22] The effect of substrate misorientation on atomic ordering in Ga0.52In0.48P epilayers grown on GaAs(001) substrates by gas-source MBE
Meenakarn, C
Staton-Bevan, AE
Dawson, MD
Duggan, G
Kean, AH
Najda, SP
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, 1997, (157): : 265 - 268
[23] High Sensitivity Ultraviolet PIN Photodiodes of ZnSSe n+-i-p Structure p+-GaAs with an Extremely Thin n+-Window Layer Grown by Using MBE
Miki, K.
Oshita, Y.
Katada, D.
Nobe, K.
Nomura, M.
Abe, T.
Kasada, H.
Ando, K.
Adachi, M.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (05) : 2925 - 2928
[24] Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C
Songprakob, W
Zallen, R
Liu, WK
Bacher, KL
PHYSICAL REVIEW B, 2000, 62 (07) : 4501 - 4510
[25] Mechanism of carrier transport across the junction of narrow band-gap planar n+ p HgCdTe photodiodes grown by liquid-phase epitaxy
Zemel, A., 1600, American Institute of Physics Inc. (98):
[26] High gain and high sensitive blue-ultraviolet avalanche photodiodes (APDs) of ZnSSe n+-i-p structure molecular beam epitaxy (MBE) grown on p-type GaAs substrates
Abe, T
Ando, K
Ikumi, K
Maeta, H
Naruse, J
Miki, K
Ehara, A
Kasada, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (16-19): : L508 - L510
[27] The effect of growth temperature and substrate misorientation on degree of order and antiphase domain size in Ga0.52In0.48P epilayers grown on GaAs(001) substrates by GS-MBE
Meenakarn, C
Staton-Bevan, AE
Najda, SP
Duggan, G
Kean, AH
ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES, 1998, 523 : 235 - 240
[28] Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE)
Jum'h, I.
Abd El-Sadek, M. S.
Al-Taani, H.
Yahia, I. S.
Karczewski, G.
JOURNAL OF ELECTRONIC MATERIALS, 2017, 46 (02) : 1061 - 1066
[29] Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE)
I. Jum’h
M. S. Abd El-Sadek
H. Al-Taani
I. S. Yahia
G. Karczewski
Journal of Electronic Materials, 2017, 46 : 1061 - 1066
[30] Mechanism of carrier transport across the junction of narrow band-gap planar n+p HgCdTe photodiodes grown by liquid-phase epitaxy -: art. no. 054504
Zemel, A
Lukomsky, I
Weiss, E
JOURNAL OF APPLIED PHYSICS, 2005, 98 (05)

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