Nd:YVO4 Laser Direct Patterning of Aluminum-Doped Zinc Oxide Films Sputtered Under Different Process Conditions

被引：5
|
作者：
Heo, Jaeseok [1 ]
Kwon, Sang Jik [1 ]
Cho, Eou Sik [1 ]
机构：
[1] Gachon Univ, Dept Elect Engn, Seongnam 461701, South Korea
来源：
SCIENCE OF ADVANCED MATERIALS | 2016年 / 8卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
Aluminum-Doped Zinc Oxide (AZO); Laser Ablation; Sputtering Power; Grain Size; SUBSTRATE; ELECTRODE; ABLATION; ITO;
D O I：
10.1166/sam.2016.2922
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
To examine the application of aluminum-doped zinc oxide (AZO) to photovoltaic devices, a study on the direct ablation of AZO deposited at different pulsed-DC sputtering powers has been performed with a Q-switched diode-pumped neodymium-doped yttrium vanadate (Nd:YVO4, lambda = 1064 nm) laser. From the laser-ablated results, it was possible to obtain a lower ablation threshold and more easily etched patterns on AZO deposited at 1 kW than on AZO deposited at 3 kW. The different ablation results show that the heating and subsequent thermal effects by Nd:YVO4 laser with a wavelength of 1064 nm are influenced by the atomic percentage of Zn and Al, the crystallinity, and the grain size of AZO films caused by the sputtering power.
引用
收藏
页码：1783 / 1789
页数：7
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