The effect of humidity on deprotection kinetics in chemically amplified resists

被引：17

作者：

Burns, SD ^{[1
]}

Medeiros, DR ^{[1
]}

Johnson, HF ^{[1
]}

Wallraff, GM ^{[1
]}

Hinsberg, WD ^{[1
]}

Willson, CG ^{[1
]}

机构：

[1] Univ Texas, Dept Chem Engn, Austin, TX 78751 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2 | 2002年 / 4690卷

关键词：

relative humidity; chemically amplified photoresists; deprotection reaction; KRS-XE; tBOC;

D O I：

10.1117/12.474230

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Water is known to play a key role in the solubility switching reaction of novolac-diazonaphthoquinone photoresists and certain chemically amplified resists. In order to quantitatively study these effects, an environmental chamber was built in which the % RH could be controlled while the extent of acid catalyzed deprotection was monitored during the post exposure bake by reflectance FTIR spectroscopy. The extent of acid catalyzed deprotection of tBOC, KRS-XE, UV6, and a tBOC-poly(hydroxystyrene) copolymer have been measured as a function of time over a range of 0-60 % RH. For tBOC, the deprotection reaction rate was found to slow considerably as the %RH was increased. Also, the relative film shrinkage varied considerably with varying % RH. Several possible mechanisms for the dependence of the reaction rate and thickness loss on % RH were investigated. For KRS-XE, the deprotection reaction kinetics were found to increase as the % RH was increased, which was an expected trend. For LTV6 and the tBOC-PHOST copolymer, no change in deprotection reaction rate was observed with changes in %RH.

引用

页码：321 / 331

页数：11

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