High-Speed, Low-Current-Density 850 nm VCSELs

被引：124
|
作者：
Westbergh, Petter [1 ]
Gustavsson, Johan S. [1 ]
Haglund, Asa [1 ]
Skoeld, Mats [1 ]
Joel, Andrew [2 ]
Larsson, Anders [1 ]
机构：
[1] Chalmers, Dept Microtechnol & Nanosci, Photon Lab, SE-41296 Gothenburg, Sweden
[2] IQE Europe Ltd, Cardiff CF3 0LW, S Glam, Wales
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2009年 / 15卷 / 03期
关键词：
High-speed modulation; optical interconnects; semiconductor lasers; surface-emitting lasers; SURFACE-EMITTING LASERS; QUANTUM-WELL LASERS; HIGH-EFFICIENCY; MODULATION; TRANSMISSION; PERFORMANCE; OPERATION; DYNAMICS;
D O I：
10.1109/JSTQE.2009.2015465
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the design, fabrication, and evaluation of large-aperture, oxide-confined 850 nm vertical cavity surface emitting lasers (VCSELs) with high modulation bandwidth at low current densities. We also compare the use of InGaAs and GaAs quantum wells (QWs) in the active region. Both VCSELs reach an output power of 9 mW at room temperature, with a thermal resistance of 1.9 degrees C/mW. The use of InGaAs QWs improves the high-speed performance and enables a small-signal modulation bandwidth of 20 GHz at 25 degrees C and 15 GHz at 85 degrees C. At a constant bias current density of only 11 kA/cm(2), we generate open eyes under large-signal modulation at bit rates up to 25 Gbit/s at 85 degrees C and 30 Gbit/s at 55 degrees C.
引用
收藏
页码：694 / 703
页数：10
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