Electrical isolation of InGaP by proton and helium ion irradiation

被引：10
|
作者：
Danilov, I [1 ]
de Souza, JP
Boudinov, H
Bettini, J
de Carvalho, MMG
机构：
[1] UFRGS, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil
[2] UNICAMP, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 08期
关键词：
D O I：
10.1063/1.1506200
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Formation of electrical isolation in n- and p-type In0.49Ga0.51P epitaxial layers grown on semi-insulating GaAs substrates was investigated using proton or helium ion irradiation. Sheet resistance increases with the irradiation dose, reaching a saturation level of approximate to10(9) Omega/square. The results show that the threshold dose necessary for complete isolation linearly depends on the original carrier concentration either in p- or n-type doped InGaP layers. Thermal stability of the isolation during postirradiation annealing was found to increase with accumulation of the ion dose. The maximum temperature at which the isolation persists is congruent to500 degreesC. (C) 2002 American Institute of Physics.
引用
收藏
页码：4261 / 4265
页数：5
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