Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications

被引：49
|
作者：
Zhang, Zeyu [1 ]
Jung, Daehwan [2 ,3 ]
Norman, Justin C. [2 ]
Chow, Weng W. [4 ]
Bowers, John E. [1 ,2 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[3] Korea Inst Sci & Technol, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea
[4] Sandia Natl Labs, Albuquerque, NM 87105 USA
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2019年 / 25卷 / 06期
关键词：
Linewidth enhancement factor; quantum dot laser; feedback sensitivity; narrow linewidth; SEMICONDUCTOR-LASERS; OPTICAL FEEDBACK; REFRACTIVE-INDEX; WELL; GAIN; NOISE; MODULATION; REDUCTION; DYNAMICS; DIODES;
D O I：
10.1109/JSTQE.2019.2916884
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The linewidth enhancement factor (alpha(H)) is an important parameter for semiconductor lasers. In this paper, we investigate, both theoretically and experimentally, the key parameters that affect alpha(H) of InAs/GaAs quantum dot lasers. Both dot uniformity and doping density are found to be critical in achieving small alpha(H) in quantum dot lasers. The prospects for quantum dot lasers in isolator-free and narrow linewidth applications are also discussed.
引用
收藏
页数：9
相关论文
共 50 条
  • [41] The above-threshold linewidth enhancement factor of silicon-based quantum dot lasers
    Ding, Shihao
    Dong, Bozhang
    Huang, Heming
    Bowers, John E.
    Grillot, Frederic
    2021 IEEE 17TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2021), 2021,
  • [42] Widely Tunable, Narrow Linewidth Quantum Dot Lasers Heterogeneously Integrated on Silicon
    Guo, Joel
    Malik, Aditya
    Minh Tran
    Kurczveil, Geza
    Liang, Di
    Bowers, John
    2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2020,
  • [43] Narrow-linewidth 1.5 μm quantum dot distributed feedback lasers
    Becker, Annette
    Sichkovskyi, Vitalii
    Bjelica, Marko
    Eyal, Ori
    Baum, Philipp
    Rippien, Anna
    Schnabel, Florian
    Witzigmann, Bernd
    Eisenstein, Gadi
    Reithmaier, Johann Peter
    NOVEL IN-PLANE SEMICONDUCTOR LASERS XV, 2016, 9767
  • [44] Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers
    A. E. Zhukov
    A. V. Savelyev
    M. V. Maximov
    Yu. M. Shernyakov
    E. M. Arakcheeva
    F. I. Zubov
    A. A. Krasivichev
    N. V. Kryzhanovskaya
    Semiconductors, 2012, 46 : 225 - 230
  • [45] Effect of an Excited-State Optical Transition on the Linewidth Enhancement Factor of Quantum Dot Lasers
    Zhukov, A. E.
    Savelyev, A. V.
    Maximov, M. V.
    Shernyakov, Yu. M.
    Arakcheeva, E. M.
    Zubov, F. I.
    Krasivichev, A. A.
    Kryzhanovskaya, N. V.
    SEMICONDUCTORS, 2012, 46 (02) : 225 - 230
  • [46] Linewidth enhancement factor in InGaAs quantum-dot amplifiers
    Schneider, S
    Borri, P
    Langbein, W
    Woggon, U
    Sellin, RL
    Ouyang, D
    Bimberg, D
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2004, 40 (10) : 1423 - 1429
  • [47] LINEWIDTH ENHANCEMENT FACTOR IN STRAINED QUANTUM-WELL LASERS
    DUTTA, NK
    WYNN, J
    SIVCO, DL
    CHO, AY
    APPLIED PHYSICS LETTERS, 1990, 56 (23) : 2293 - 2294
  • [48] Linewidth enhancement factor of Type-II GaAsSb/GalnAs/GaAs quantum well lasers
    Park, Seoung-Hwan
    Kim, Hwa-Min
    Kim, Jong-Jae
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 52 (06) : 1951 - 1954
  • [49] Linewidth enhancement factor of strained GaAsSb/GaAs type-II quantum well lasers
    Kim, JJ
    Kim, HM
    Park, SH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 (04) : 732 - 735
  • [50] DISCUSSION OF THE LINEWIDTH ENHANCEMENT FACTOR-ALPHA OF GAAS/GAALAS QUANTUM-WELL LASERS
    HOCHHOLZER, M
    JORDAN, V
    IEE PROCEEDINGS-OPTOELECTRONICS, 1994, 141 (05): : 311 - 315
12345