Effect of pressure and electron-phonon interaction on optical properties of GaN triangular quantum wires

被引:4
|
作者
Khordad, R. [1 ]
Bahramiyan, H. [2 ]
机构
[1] Univ Yasuj, Dept Phys, Coll Sci, Yasuj, Iran
[2] Islamic Azad Univ, Marvdasht Branch, Dept Opt & Laser Engn, Marvdasht, Iran
关键词
Quantum wire; Pressure; e-p Interaction; Optical properties; 3RD-HARMONIC GENERATION; SURFACE-STATES; TEMPERATURE-DEPENDENCE; EPITAXIAL-GROWTH; BINDING-ENERGY; SELF-ENERGY; FILMS; ALN; SEMICONDUCTORS; COEFFICIENTS;
D O I
10.1007/s11082-015-0244-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, both the effect of electron-phonon (e-p) interaction and pressure on the optical properties of GaN triangular quantum wires has been studied. In this regard, the electronic transition energy and dipole matrix elements are calculated, by taking the effects of the electron-LO-phonon interaction and the hydrostatic pressure into account. Then, the refractive index (RI) changes and absorption coefficients (ACs) are computed within the framework of the compact density matrix approach and iterative method. It is found that the transition energy and dipole matrix elements decrease under the e-p interaction and the hydrostatic pressure. Obviously, it is shown that the hydrostatic pressure increase the effect of e-p interaction on the transition energy. The ACs and RI changes shift toward lower energies under the e-LO-p interaction and the pressure. RI changes and ACs are increased in the influence of e-p interaction but they are decreased under the hydrostatic pressure. The influence of e-LO-p interaction under the hydrostatic pressure on the RI changes and ACs cannot be neglected for a GaN triangular quantum wire.
引用
收藏
页码:3759 / 3773
页数:15
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