Two-dimensional self-consistent simulation of a triangular P-channel SOI nano-flash memory device

被引:0
|
作者
Tang, XH [1 ]
Baie, X
Colinge, JP
Gustin, C
Bayot, V
机构
[1] Catholic Univ Louvain, Microelect Lab, DICE, B-1348 Louvain, Belgium
[2] IBM Corp, Adv Log & SRAM Dev, Hopewell Jct, NY 12533 USA
[3] Catholic Univ Louvain, Microelect Lab, CERMIN, Res Ctr Micro & Nanoscop Mat & Elect Dev, B-1348 Louvain, Belgium
[4] Catholic Univ Louvain, Unite PCPM, B-3000 Louvain, Belgium
[5] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
关键词
hole distribution; nano-flash memory; quantum mechanical effects; self-consistent simulation; threshold voltage shift;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the simulation of an SOI nano-flash memory device. The device is composed of a triangular quantum wire channel P-MOSFET with a self-aligned nano-floating gate embedded in the gate oxide. The simulation is carried out by combining TSUPREM-4 [1] and a two-dimensional (2-D) self-consistent solution of the Poisson and Schrodinger equations. The fabrication process as well as quantum physics are taken into account. Hole distribution in the inversion layer of the triangular channel section. is calculated in terms of wave functions and energy subbands. The threshold voltage shift between the programming and erasing of the device is investigated. In this paper, we show that the channel shape plays a crucial role in the programming voltage and the threshold voltage shift. Based on the fact that the holes are confined mainly at the top of the triangular channel section, we explain why our triangular channel device can be operated at relatively low programming voltage despite of a thick gate oxide and tunnel oxide. The threshold voltage shift in the triangular channel device is compared with that in a rectangular channel device. The result shows that the triangular channel device exhibits the larger threshold voltage shift.
引用
收藏
页码:1420 / 1426
页数:7
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