High performance InP-based InAs triangular quantum well lasers operating beyond 2 μm

被引：0
|
作者：
Gu, Y. [1 ]
Zhang, Y. G. [1 ]
Cao, Y. Y. [1 ]
Chen, X. Y. [1 ]
Li, Hsby [1 ]
Zhou, L. [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源：
NOVEL IN-PLANE SEMICONDUCTOR LASERS XIII | 2014年 / 9002卷
关键词：
lasers; mid-infrared; triangular quantum well; InAs; InP; antimony-free; MOLECULAR-BEAM EPITAXY;
D O I：
10.1117/12.2043222
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
InP-based antimony-free In0.53Ga0.47As/InAs/In0.53Ga0.47As strained triangular quantum well lasers have been demonstrated for the light sources with wavelength beyond 2 m. Theoretical estimation shows that the triangular quantum well owns the longer emission wavelength than the rectangular quantum well with the same strain extent. The triangular quantum well was formed experimentally by using gas source molecular beam epitaxy grown digital alloy, and the growth temperature of the triangular quantum wells was optimized. The triangular quantum well lasers with emission beyond 2.2 mu m under continuous-wave operation at temperatures higher than 330 K have been demonstrated. The performances of the triangular quantum well lasers are improved comparing to those of InAs rectangular quantum lasers with the nearly same lasing wavelength.
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页数：7
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