Effect of annealing temperature on piezoelectric and mechanical properties of (Bi0.5Na0.5)TiO3-(Bi0.5K0.5)TiO3-BaTiO3 thin films

被引:7
|
作者
Zhan, K. [1 ]
Su, M. [1 ]
Han, H. [1 ]
Xie, S. F. [2 ]
Zhu, Y. K. [1 ]
Wang, D. [1 ]
Cheng, H. B. [1 ]
Wang, X. Y. [1 ]
机构
[1] Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, Shanghai 200093, Peoples R China
[2] Oxford Instruments Co, Shanghai 201109, Peoples R China
基金
中国博士后科学基金;
关键词
Thin film; Bismuth titante; PFM; Piezoelectric; MORPHOTROPIC PHASE-BOUNDARY; ELECTRIC PROPERTIES; CERAMICS; FUTURE; BT;
D O I
10.1016/j.ceramint.2015.09.114
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Polycrystalline piezoelectric lead-free 85 mol% (Bi0.5Na0.5)TiO3-10 mol% (Bi0.5K0.5)TiO3-5 mol% BaTiO3 (85BNT-10BKT-5BT) thin films were fabricated at different annealing temperatures by a chemical solution deposition method on Pt/Ti/SiO2/Si substrates. Perovskite phase was achieved during annealing at 650-800 degrees C. The effect of annealing temperature on piezoelectric and mechanical properties was investigated. The results show that 85BNT-10BKT-5BT thin films annealed at 700 degrees C exhibit the largest effective d(33) value of 140.4 pm/V, and the highest elastic modulus 142.0 GPa. The optimal properties can be attributed to dense domain and homogenous microstructure. Results show that 85BNT-10BKT-5BT thin films may be a good candidate for lead-free piezoelectric-based micro-electromechanical systems. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:1627 / 1632
页数:6
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