Effect of Reverse Gate Bias on Hot-Carrier Reliability in OCB Trench MOSFET for Solar Cell Applications

被引：0
|
作者：
Jin, Minghao [1 ]
Fu, Xiao [2 ]
机构：
[1] Univ Salford, Salford M5 4WT, Lancs, England
[2] British Chinese Culture Co Ltd, Manchester, England
来源：
PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON AUTOMATION AND COMPUTING (ICAC 12) | 2012年
关键词：
hot carrier degradation; OCB Trench MOSFET; HCI; TCAD simulation; TRANSISTORS; DEGRADATION; CHANNEL;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
this work describes the hot carrier reliability analysis of a 100V Oxide Charge Balanced (OCB) Trench MOSFET in solar cell applications. Device degradation is studied on the OFF states with a Reverse Gate Bias (RGB) condition. The detail of the properly designed experiment is presented, which identifies distinctive acceleration phenomenon associated to Hot Carrier Injection (HCI). Adopting the TCAD simulation tools, the electrical characteristics of OCB trench MOSFET under reverse gate bias stress condition has been properly-calibrated. The mechanism underlying HCI degradation that affects the OFF state lifespan of an OCB device is explained.
引用
收藏
页码：230 / 233
页数：4
相关论文
共 50 条
  • [21] Hot-carrier reliability and analog performance investigation of DMG-ISEGaS MOSFET
    Kaur, Ravneet
    Chaujar, Rishu
    Saxena, Manoj
    Gupta, R. S.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (09) : 2556 - 2561
  • [22] A comparison of hot-carrier degradation in tungsten polycide gate and poly gate p-MOSFET's
    Ang, DS
    Ling, CH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (04) : 895 - 903
  • [23] Gate-to-drain capacitance as a monitor for hot-carrier degradation in submicrometer MOSFET's
    Ling, CH
    PROCEEDINGS OF THE SYMPOSIUM ON SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS, 1997, 97 (10): : 101 - 117
  • [24] Design in hot-carrier reliability for high performance logic applications
    Fang, P
    Tao, J
    Chen, JF
    Hu, CM
    IEEE 1998 CUSTOM INTEGRATED CIRCUITS CONFERENCE - PROCEEDINGS, 1998, : 525 - 531
  • [25] Modeling and simulation of cylindrical surrounding double-gate (CSDG) MOSFET with vacuum gate dielectric for improved hot-carrier reliability and RF performance
    Jay Hind Kumar Verma
    Subhasis Haldar
    R. S. Gupta
    Mridula Gupta
    Journal of Computational Electronics, 2016, 15 : 657 - 665
  • [26] Modeling and simulation of cylindrical surrounding double-gate (CSDG) MOSFET with vacuum gate dielectric for improved hot-carrier reliability and RF performance
    Verma, Jay Hind Kumar
    Haldar, Subhasis
    Gupta, R. S.
    Gupta, Mridula
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2016, 15 (02) : 657 - 665
  • [27] MOSFET DEGRADATION DUE TO HOT-CARRIER EFFECT AT HIGH-FREQUENCIES
    SUBRAHMANIAM, R
    CHEN, JY
    JOHNSTON, AH
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (01) : 21 - 23
  • [28] THE EFFECT OF SUBSTRATE BIAS ON HOT-CARRIER DAMAGE IN NMOS DEVICES
    DOYLE, BS
    MARCHETAUX, JC
    BOURCERIE, M
    BOUDOU, A
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (01) : 11 - 13
  • [29] HOT CARRIER INJECTION IN OXIDES AND THE EFFECT ON MOSFET RELIABILITY
    BALK, P
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1984, (69): : 63 - 82
  • [30] NITRIDED GATE-OXIDE CMOS TECHNOLOGY FOR IMPROVED HOT-CARRIER RELIABILITY
    HORI, T
    MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) : 245 - 252
12345