Photo-induced structural changes in Ge-Sb-Se films

被引：14
|
作者：
Lin, Li
Wang, Guoxiang
Shen, Xiang [1 ]
Dai, Shixun
Xu, Tiefeng
Nie, Qiuhua
机构：
[1] Ningbo Univ, Lab Infrared Mat & Devices, Ningbo 315211, Zhejiang, Peoples R China
来源：
INFRARED PHYSICS & TECHNOLOGY | 2017年 / 81卷
关键词：
THIN-FILMS;
D O I：
10.1016/j.infrared.2016.12.016
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Amorphous Ge-Sb-Se thin films have been prepared by the radio-frequency (RF) magnetron co-sputtering deposition technique, and their intrinsic photosensitivity and photo-induced structural changes have been investigated. The results show a crossover from photodarkening (PD) to photobleaching (PB) in the films when the film compositions change from Se-deficient to rich. Further Raman analysis on these as-prepared thin films irradiated with a laser of wavelength 655 nm in every five minutes provides direct evidence of photo-induced structure rearrangements. (C) 2016 Published by Elsevier B.V.
引用
收藏
页码：59 / 63
页数：5
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