Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique

被引：2
|
作者：
Gu, SH [1 ]
Wang, MT [1 ]
Chan, CT [1 ]
Zous, NK [1 ]
Yeh, CC [1 ]
Tsai, WJ [1 ]
Lu, TC [1 ]
Wang, TH [1 ]
Ku, J [1 ]
Lu, CY [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
来源：
2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年
关键词：
D O I：
10.1109/RELPHY.2004.1315428
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The lateral distribution of programmed charge in a hot electron program/hot hole erase nitride storage flash cell is investigated by using a charge pumping technique. Our study shows that the secondly programmed bit has a wider trapped charge distribution than the first programmed bit. In addition, we find prograrnmed charge spreads further into the channel with program/erase cycle number.
引用
收藏
页码：639 / 640
页数：2
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