Design of a transmission gate based CMOL memory array

被引：1

作者：

Abid, Z. ^{[1
]}

Barua, M. ^{[1
]}

Alma'aitah, A. ^{[1
]}

机构：

[1] Univ Western Ontario, Dept Elect & Comp Engn, London, ON, Canada

来源：

MICRO & NANO LETTERS | 2008年 / 3卷 / 03期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1049/mnl:20080012

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A design of a nanoelectronic memory array, compatible with both the molecular switch (nanodevice) electrical characteristics and CMOS 45 nm semiconductor technology node is presented. The proposed transmission gate based CMOL (hybrid CMOS/MOLecular) memory cell does not suffer from the operational difficulties faced by the conventional CMOL cell. The control circuitry with improved multiplexer designs is introduced, and it shows that the required voltage levels to program the nanodevices can be achieved. Moreover, the proposed memory cell has the same area as the existing CMOL inverter cell allowing easier implementation of both logic and memory circuits on the same chip.

引用

页码：70 / 76

页数：7

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