Properties of TiO2/TiOx Active Layers and Fabrication Resistive Switching Device

被引：0
|
作者：
Bibilashvili, A. [1 ,2 ]
Kushitashvili, Z. [2 ]
机构：
[1] Ivane Javakhishvili Tbilisi State Univ, Dept Exact & Nat Sci, Chavchavadze Ave 1, GE-0179 Tbilisi, Georgia
[2] LEPL Inst Micro & Nanoelect, Chavchavadze Ave 13, GE-0179 Tbilisi, Georgia
来源：
INTERNATIONAL JOURNAL OF NANOSCIENCE | 2019年 / 18卷 / 3-4期
关键词：
Titanium oxide; dielectric; memristor;
D O I：
10.1142/S0219581X19400854
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electrical and structural properties of titanium oxides TiO2/TiOx fabricated by reactive magnetron sputtering were studied and used in a memristor. X-ray diffraction and I-V mea- surements were performed in order to characterize the fabricated structures.
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页数：4
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