A novel structure of the fully differential CMOS amplifier with symmetric active load

被引:0
|
作者
Pavlovic, Vlastimir D. [1 ]
Djordjevic, Srdjan D. [1 ]
机构
[1] Univ Nis, Dept Elect, Fac Elect Engn, Nish, Serbia
关键词
fully differential amplifier; analogy electronic; clear factor distortion; linearity error; MULTIPLICATIVE RENORMALIZATION; CIRCUITS; DESIGN; ANALOG; DISTORTION; FILTERS;
D O I
10.1080/00207210802654422
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this article, we propose a novel general structure of a linear symmetric fully differential voltage amplifier with a symmetric output. It is applicable to all sets of complementary component pairs such as BJT, JFET and MOSFET. We demonstrate the superiority of the proposed circuit in comparison with the state-of-the-art solutions. The characteristics are illustrated in both frequency and time domains, and a comparison is given between the proposed amplifier and the traditional differential amplifier with a current mirror as an active load for the same set of complementary components in CMOS equally sized W/L=150/3 technology. The static voltage transfer characteristic of the proposed amplifier has an extremely small linearity error. The deviation from the linear characteristics is less than 0.018mV for the amplitude of the output differential voltage of 1Vpp. The common-mode gain by symmetric output is negligible because the proposed structure is fully symmetric. The simulation results demonstrate the efficiency of the proposed amplifier.
引用
收藏
页码:331 / 349
页数:19
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