Control of doped layers in p-i-n microcrystalline solar cells fully deposited with HWCVD

被引：1

作者：

Fonrodona, M ^{[1
]}

Soler, D ^{[1
]}

Escarré, J ^{[1
]}

Asensi, JM ^{[1
]}

Bertomeu, J ^{[1
]}

Andreu, J ^{[1
]}

机构：

[1] Univ Barcelona, Dept Fis Aplicada & Opt, E-08028 Barcelona, Spain

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2004年 / 338卷

关键词：

D O I：

10.1016/j.jnoncrysol.2004.03.070

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, the influence of the deposition conditions on the performance of p-i-n microcrystalline silicon solar cells completely deposited by hot-wire chemical vapor deposition is studied. With this aim, the role of the doping concentration, the substrate temperature of the p-type layer and of amorphous silicon buffer layers between the p/i and i/n microcrystalline layers is investigated. Best results are found when the p-type layer is deposited at a substrate temperature of 125degreesC. The dependence seen of the cell performance on the thickness of the i layer evidenced that the efficiency of our devices is still limited by the recombination within this layer, which is probably due to the charge of donor centers most likely related to oxygen. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：659 / 662

页数：4

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