Impact of Maxwell rigidity transitions on resistance drift phenomena in GexTe1-x glasses

被引：23

作者：

Luckas, J. ^{[1
,2
,3
]}

Olk, A. ^{[1
,2
,3
]}

Jost, P. ^{[1
]}

Volker, H. ^{[1
]}

Alvarez, J. ^{[2
,3
]}

Jaffre, A. ^{[2
,3
]}

Zalden, P. ^{[1
]}

Piarristeguy, A. ^{[4
]}

Pradel, A. ^{[4
]}

Longeaud, C. ^{[2
,3
]}

Wuttig, M. ^{[1
,5
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Phys 1, D-52056 Aachen, Germany

[2] Univ Paris 06, Supelec, Lab Genie Elect Paris, CNRS UMR 8507, F-91190 Gif Sur Yvette, France

[3] Univ Paris 11, F-91190 Gif Sur Yvette, France

[4] Univ Montpellier 2, Inst Charles Gerhardt Montpellier, UMR CNRS 5253, F-34095 Montpellier 5, France

[5] Rhein Westfal TH Aachen, JARA Fundamentals Future Informat Technol, Aachen, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 09期

关键词：

PHASE-CHANGE MATERIALS; CHALCOGENIDE GLASSES; DATA-STORAGE; THRESHOLD; NETWORKS;

D O I：

10.1063/1.4893743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous chalcogenides usually exhibit a resistivity, which increases with age following a power law rho similar to t(alpha). Existing theories link this change in amorphous state resistivity to structural relaxation. Here, the impact of fundamental glass properties on resistance drift phenomena in amorphous GexTe1-x networks is studied. Employing Raman spectroscopy, the Maxwell rigidity transition from flexible to stressed rigid is determined to occur in the compositional range 0.250<x(c)<0.265. Stressed rigid glasses (x>0.265) exhibit rather strong resistance drift, where the drift parameters increase steadily from alpha=0.13 for amorphous GeTe to alpha=0.29 for compositions near the stiffness threshold x(c). On the other hand, the drift parameter in flexible glasses (x<0.25) decreases with decreasing Ge content x to values as low as alpha=0.05. These findings illustrate the strong impact of the stiffness threshold on resistance drift phenomena in chalcogenides. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 45 条

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