Future Memory Technologies

被引：0
|
作者：
Lee, Won-Seong [1 ]
机构：
[1] Samsung Elect Co Ltd, Semicond Business Div, Memory R&D Ctr, Yongin 449900, Gyunggi Do, South Korea
来源：
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The presentation will discuss the future memory technologies beyond the 30 nm node, especially for DRAM, NAND Flash, new memories such as Phase change RAM (PRAM), and ferroelectric RAM (FRAM), and novel device structure technologies, which include how far we can extend so far successful conventional semiconductor memories. First of all, business demands and new applications of memories will be summarized. Then the key technical challenges of conventional semiconductor memories to overcome the scaling limitation, possible solutions and directions will be discussed in detail.
引用
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页码：1 / 4
页数：4
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