Use of Ambipolar Dual-Gate Carbon Nanotube Field-Effect Transistor to Configure Exclusive-OR Gate

被引：2

作者：

Liu, Xueyuan ^{[1
,2
]}

Sun, Bing ^{[1
,2
]}

Huang, Kailiang ^{[1
,2
]}

Feng, Chao ^{[1
,2
]}

Li, Xiao ^{[2
,3
]}

Zhang, Zhen ^{[1
,2
]}

Wang, Wenke ^{[2
,3
]}

Zhang, Xin'gang ^{[1
,2
]}

Huang, Zhi ^{[1
,2
]}

Liu, Huaping ^{[2
,3
]}

Chang, Hudong ^{[1
,2
]}

Jia, Rui ^{[1
,2
]}

Liu, Honggang

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

ACS OMEGA | 2022年 / 7卷 / 10期

关键词：

XOR;

D O I：

10.1021/acsomega.1c07088

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

As the physical scaling limit of silicon-based integrated circuits is approached, new materials and device structures become necessary. The exclusive-OR (XOR) gate is a basic logic gate performed as a building block for digital adder and encrypted circuits. Here, we suggest that using the ambipolar property of carbon nanotubes and the threshold modulation ability of dual-gate field-effect transistors, an XOR gate can be constructed in only one transistor. For a traditional XOR gate, 4 to 6 transistors are needed, and this low-footprint topology could be employed in the future for hyperscaling and three-dimensional logic and memory transistor integration.

引用

页码：8819 / 8823

页数：5

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