Equivalent Circuit Modeling of Separate Absorption Grading Charge Multiplication Avalanche Photodiode

被引：17
|
作者：
Mai, Yu Xiang [1 ]
Wang, Gang [1 ]
机构：
[1] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 2009年 / 27卷 / 09期
基金：
中国国家自然科学基金;
关键词：
Avalanche photodiodes (APDs); equivalent circuit model; frequency response; BANDWIDTH; SPEED; TIME; GAIN;
D O I：
10.1109/JLT.2008.929121
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a novel equivalent circuit model for the frequency performance of separate absorption grading charge multiplication (SAGCM) avalanche photodiode (APD) is developed. This model includes effects of carrier transit time, avalanche buildup time, and parasitic RC elements. Based on the equivalent circuit model, frequency and bandwidth characteristics of SAGCM APD can be simulated in advance to device fabrication, and the simulation results are in good agreement with experimental data. Conventional pin photodiodes can also be simulated as a special case when M = 1. In addition, the frequency response of SAGCM APDs and pin photodiodes with different illumination directions are investigated.
引用
收藏
页码：1197 / 1202
页数：6
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