Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors

被引：96

作者：

Ouyang, Yijian ^{[1
]}

Yoon, Youngki ^{[1
]}

Fodor, James K. ^{[1
]}

Guo, Jing ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 20期

关键词：

D O I：

10.1063/1.2387876

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon-based nanostructures promise near ballistic transport and are being intensively explored for device applications. In this letter, the performance limits of carbon nanoribbon (CNR) field-effect transistors (FETs) and carbon nanotube (CNT) FETs are compared. The ballistic channel conductance and the quantum capacitance of the CNRFET are about a factor of 2 smaller than those of the CNTFET because of the different valley degeneracy factors for CNRs and CNTs. The intrinsic speed of the CNRFET is faster due to a larger average carrier injection velocity. The gate capacitance plays an important role in determining which transistor delivers a larger on current. (c) 2006 American Institute of Physics.

引用

页数：3

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