Nitride-based MIS-like diodes with semi-insulating Mg-doped GaN cap layers

被引：3

作者：

Chang, S. J. ^{[1
]}

Yu, C. L.

Chang, P. C.

Lin, Y. C.

Chen, C. H.

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[2] Nan Jeon Inst Technol, Dept Elect Engn, Yan Hsui Township 737, Tainan County, Taiwan

[3] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 830, Taiwan

[4] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 10期

关键词：

D O I：

10.1088/0268-1242/21/10/009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitride-based diodes with an in situ grown, 30 nm thick unactivated Mg-doped GaN cap layer were fabricated. It was found that we could significantly reduce leakage current by using the semi-insulating Mg-doped GaN cap layer. This is due to the thicker and higher potential barrier and the effective passivation of surface states when the semi-insulating Mg-doped GaN cap layer was inserted.

引用

页码：1422 / 1424

页数：3

共 25 条

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