Nitride-based MIS-like diodes with semi-insulating Mg-doped GaN cap layers

被引：3
|
作者：
Chang, S. J. [1 ]
Yu, C. L.
Chang, P. C.
Lin, Y. C.
Chen, C. H.
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan
[2] Nan Jeon Inst Technol, Dept Elect Engn, Yan Hsui Township 737, Tainan County, Taiwan
[3] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 830, Taiwan
[4] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 10期
关键词：
D O I：
10.1088/0268-1242/21/10/009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nitride-based diodes with an in situ grown, 30 nm thick unactivated Mg-doped GaN cap layer were fabricated. It was found that we could significantly reduce leakage current by using the semi-insulating Mg-doped GaN cap layer. This is due to the thicker and higher potential barrier and the effective passivation of surface states when the semi-insulating Mg-doped GaN cap layer was inserted.
引用
收藏
页码：1422 / 1424
页数：3
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