Single Event Response of the Samsung 16G NAND Flash

被引：0
|
作者：
Oldham, Timothy R. [1 ,2 ,3 ]
Wilcox, Edward P. [4 ]
Friendlich, Mark R. [4 ]
机构：
[1] Dell Serv Fed Govt Inc, Boulder, CO 80301 USA
[2] NASA GSFC, Boulder, CO 80301 USA
[3] Ball Aerosp, Boulder, CO 80301 USA
[4] NASA, MEI Technol, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA
来源：
2013 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2013年
关键词：
FIGURE;
D O I：
暂无
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
This study was undertaken to identify and characterize the susceptibilities of 16 Gbit NAND Flash memories from Samsung to destructive and nondestructive single-event effects (SEE).
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页数：5
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