Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects

被引：20

作者：

Yang, X. L. ^{[1
]}

Zhu, W. X. ^{[1
]}

Wang, C. D. ^{[1
]}

Fang, H. ^{[1
]}

Yu, T. J. ^{[1
]}

Yang, Z. J. ^{[1
]}

Zhang, G. Y. ^{[1
]}

Qin, X. B. ^{[2
]}

Yu, R. S. ^{[2
]}

Wang, B. Y. ^{[2
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 15期

基金：

中国国家自然科学基金;

关键词：

doping profiles; Doppler broadening; ferromagnetic materials; gallium compounds; III-V semiconductors; magnetic thin films; manganese compounds; MOCVD; positron annihilation; semiconductor doping; semiconductor thin films; semimagnetic semiconductors; vacancies (crystal); wide band gap semiconductors; OPTICAL-PROPERTIES; GAN; FERROMAGNETISM; FILMS; SEMICONDUCTORS; BEAM; SI;

D O I：

10.1063/1.3120267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The vacancy-type defects in (Ga,Mn)N films grown by metal organic chemical vapor deposition were studied by positron annihilation technique. Doppler broadening spectra were measured for the films. Compared to the undoped GaN film, the positron trapping defects in the (Ga,Mn)N films have been changed to a new type defects and its concentration increases with the increasing Mn concentration. By analyzing the S-W correlation plots and our previous results, we identify this type defects in the (Ga,Mn)N as V(N)-Mn(Ga) complex. This type of defects should be considered when understand the magnetic properties in a real (Ga,Mn)N system.

引用

页数：3

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