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Stacking of Two-Dimensional Materials in Lateral and Vertical Directions
被引:100
|作者:
Lim, Hyunseob
[1
,3
,4
]
Yoon, Seong In
[2
,3
]
Kim, Gwangwoo
[2
,3
]
Jang, A-Rang
[2
]
Shin, Hyeon Suk
[1
,2
,3
,4
]
机构:
[1] Ulsan Natl Inst Sci & Technol UNIST, Dept Chem, Ulsan 689798, South Korea
[2] Ulsan Natl Inst Sci & Technol UNIST, Dept Energy Engn, Ulsan 689798, South Korea
[3] Ulsan Natl Inst Sci & Technol UNIST, Low Dimens Carbon Mat Ctr, Ulsan 689798, South Korea
[4] Ulsan Natl Inst Sci & Technol UNIST, Inst Basic Sci, Ctr Multidimens Carbon Mat, Ulsan 689798, South Korea
基金:
新加坡国家研究基金会;
关键词:
HEXAGONAL BORON-NITRIDE;
CHEMICAL-VAPOR-DEPOSITION;
MOS2 ATOMIC LAYERS;
LARGE-AREA;
HIGH-QUALITY;
THIN-FILMS;
H-BN;
INPLANE HETEROSTRUCTURES;
RATE CAPABILITY;
GRAPHENE FILMS;
D O I:
10.1021/cm502170q
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Along With the explosive interest in graphene research, much attention has been paid to other two-dimensional (2D) materials such as transition Metal dithalcogenides (TMDs) and hexagonal boron nitride (h-BN). In particular the stacking of various 2D materials in the vertical and lateral directions has been studied recently, as novel physicochemical properties are expected that could result in new applications for electronic devices In this Perspective, recent advances in the stacking of 2D materials are discussed from the point of view of materials chemistry. In particular, methods for stacking of 2D materials (h-BN/graphene, graphene/WS2 (or MoS2)/graphene, etc.), the properties of vertically and laterally stacked 2D materials, and possible applications are discussed. Finally, we discuss important emerging issues to be studied in future.
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页码:4891 / 4903
页数:13
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