Anisotropic Seebeck coefficient in β-FeSi2 single crystal

被引:21
|
作者
Takeda, M [1 ]
Kuramitsu, M [1 ]
Yoshio, M [1 ]
机构
[1] Nagaoka Univ Technol, Dept Mech Engn, Nagaoka, Niigata 9402188, Japan
关键词
thermoelectric material; Seebeck coefficient; bulk single crystal;
D O I
10.1016/j.tsf.2004.02.066
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
To discuss the possibility of improvement in thermoelectric properties of beta-FeSi2, we examined anisotropy of the Seebeck coefficient of the beta-FeSi2 using single crystal specimens grown by temperature gradient solution growth method. Polyhedral shaped bulk crystals with facet planes were obtained, and they were confirmed as single phase of beta-FeSi2 by X-ray diffraction measurements. For measurements of the Seebeck coefficient, we developed an apparatus that is capable of measuring the Seebeck coefficient of a small specimen down to a few mm in size, because commercially available apparatus cannot be used for such small specimens. The Seebeck coefficient measured along one direction on a surface was around 294 muV/K, while that measured along another direction perpendicular to the former one was 218 muV/K. The difference was larger than experimental error, and appeared to attribute to the difference in crystallographic direction. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:179 / 181
页数:3
相关论文
共 50 条
  • [31] Excitonic transitions in β-FeSi2 epitaxial films and single crystals
    Birdwell, A.G. (gbirdwell@memc.com), 1600, American Institute of Physics Inc. (95):
  • [32] Polarized optical reflection study on single crystalline β-FeSi2
    Udono, Haruhiko
    Kikuma, Isao
    Tajima, Hiroyuki
    Takarabe, Kenichi
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2007, 18 (Suppl 1) : S65 - S69
  • [33] Thermoelectric properties of solution grown β-FeSi2 single crystals
    Suzuki, Hirokazu
    Udono, Haruhiko
    Kikuma, Isao
    MATERIALS TRANSACTIONS, 2006, 47 (06) : 1428 - 1431
  • [34] Thermoelectric properties of β-FeSi2 single crystals and polycrystalline β-FeSi2+x thin films
    Heinrich, A
    Griessmann, H
    Behr, G
    Ivanenko, K
    Schumann, J
    Vinzelberg, H
    THIN SOLID FILMS, 2001, 381 (02) : 287 - 295
  • [35] Valence Electronic Structure of β-FeSi2 Single Crystal Investigated by Photoelectron Spectroscopy Using Synchrotron Radiation
    Ogawa, K.
    Sasaki, M.
    Ohnishi, A.
    Kitaura, M.
    Fujimoto, H.
    Azuma, J.
    Takahashi, K.
    Kamada, M.
    ASIA-PACIFIC CONFERENCE ON SEMICONDUCTING SILICIDES SCIENCE AND TECHNOLOGY TOWARDS SUSTAINABLE OPTOELECTRONICS (APAC-SILICIDE 2010), 2011, 11 : 63 - 66
  • [36] The effect of crystal grain size on thermoelectric properties of sintered β-FeSi2
    Isoda, Y
    Imai, Y
    Shinohara, Y
    XXI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '02, 2002, : 102 - 105
  • [37] Thermoelectric properties of β-FeSi2
    Pandey, Tribhuwan
    Singh, David J.
    Parker, David
    Singh, Abhishek K.
    Journal of Applied Physics, 2013, 114 (15):
  • [38] Seebeck Coefficient and Optical Studies of Cadmium Doped CuInS2 Single Crystal
    Chaki, S. H.
    ACTA PHYSICA POLONICA A, 2009, 116 (02) : 221 - 225
  • [39] Thermoelectric properties of β-FeSi2
    Pandey, Tribhuwan
    Singh, David J.
    Parker, David
    Singh, Abhishek K.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (15)
  • [40] Band structure and electronic properties of FeSi and α-FeSi2
    1600, American Inst of Physics, Woodbury, NY, USA (76):