MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission

被引：5
|
作者：
Zhao, Q
Pan, JQ
Zhang, J
Li, BX
Zhou, F
Wang, BJ
Wang, LF
Zhao, LJ
Zhou, GT
Wang, W
机构：
[1] Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China
[2] Beijing Univ Posts & Telecommun, Minist Educ, Key Lab Opt Commun & Lightwave Technol, Beijing 100876, Peoples R China
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 06期
关键词：
D O I：
10.1088/0268-1242/21/6/004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Details of the design, fabrication and testing of a strained InGaAsP/InGaAsP multiple quantum well (MQW) electroabsorption modulator (EAM) monolithically integrated with a DFB laser by ultra-low-pressure selective area growth (SAG) are presented. The method greatly simplifies the integration process. A study of the controllability of band-gap energy by SAG has been performed. After being completely packaged in a seven-pin butterfly compact module, the device successfully performs 10 Gb s(-1) nonreturn to zero (NRZ) operation on uncompensated transmission span >53 km in a standard fibre with a 8.7 dB dynamic extinction ratio. A receiver sensitivity of -18.9 dBm at a bit error rate (BER) of 10(-10) is confirmed. 10 GHz short pulse trains with 15.3 ps pulsewidth have also been generated.
引用
收藏
页码：734 / 739
页数：6
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