First-principles identification of charge-transition levels of native defects in BaF2

被引:0
|
作者
Ibraheem, A. M. [2 ]
Eisa, M. H. [2 ,3 ]
Adlan, W. [4 ]
Amolo, George O. [5 ]
Khalafalla, M. A. H. [1 ]
机构
[1] Taibah Univ, Coll Sci, Dept Phys, Yanbu, Saudi Arabia
[2] Sudan Univ Sci & Technol, Coll Sci, Dept Phys, Khartoum 11113, Sudan
[3] Al Imam Mohammad Ibn Saud Islamic Univ, Coll Sci, Dept Phys, Riyadh 11642, Saudi Arabia
[4] Faisal Univ, Dept Phys, Aldamam, Saudi Arabia
[5] Univ Eldoret, Dept Phys, Computat Mat Sci Grp, POB 1125-30100, Eldoret, Kenya
来源
MODERN PHYSICS LETTERS B | 2017年 / 31卷 / 07期
关键词
Density functional calculation; native defects in BaF2; defect charge-transition levels; AB-INITIO CALCULATIONS; APPROXIMATION;
D O I
10.1142/S0217984917500683
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper reports on semilocal and hybrid density functional analysis of charge transition levels of native defects in BaF2 structure. The transition level is defined as the Fermi level where two defect charge states have the same formation energy. The errors arising from the small supercell size effects have been relieved through extrapolating the formation energies to the limit of infinite supercell size. The level placement in the corrected band gap is achieved using a correction factor obtained from the difference between the valence band maxima in semilocal and hybrid calculations. The band gap size from hybrid calculation is validated using the full-potential, linearized augmented planewave method with the modified Becke Johnson exchange potential. Our results are sufficiently accurate and, thus, significant for direct comparison with experiments.
引用
收藏
页数:11
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