Geometrical contribution to the anomalous Nernst effect in TbFeCo thin films

被引:11
|
作者
Ando, Ryo [1 ]
Komine, Takashi [1 ]
机构
[1] Ibaraki Univ, Fac Engn, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 3168511, Japan
基金
日本学术振兴会;
关键词
BISMUTH;
D O I
10.1063/1.5006210
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The geometrical contribution to the anomalous Nernst effect in magnetic thin films was experimentally investigated by varying the aspect ratios and electrode configurations. The bar-type electrode configuration induces a short-circuit current near both edges of electrodes and decreases the effective Nernst voltage, while the point-contact (PC) electrode exploits the intrinsic Nernst voltage. In a sample with PC electrodes, as the sample width along the transverse direction of the thermal flow increases, the Nernst voltage increases monotonically. Thus, a much wider element with PC electrodes enables us to bring out a larger Nernst voltage by utilizing perpendicularly magnetized thin films. (c) 2018 Author(s).
引用
收藏
页数:6
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