Photoconductive response of InAs/GaAs quantum dot stacks

被引：7
|
作者：
Hofer, S [1 ]
Hirner, H [1 ]
Bratschitsch, R [1 ]
Strasser, G [1 ]
Unterrainer, K [1 ]
机构：
[1] Vienna Tech Univ, Inst Festkorperelektron, A-1040 Vienna, Austria
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期
关键词：
InAs/GaAs quantum dot stacks; photoluminescence spectroscopy; photocurrent spectroscopy; photodetector;
D O I：
10.1016/S1386-9477(01)00517-3
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigate the energy levels of self-assembled InAs GaAs quantum (lot stacks by photoluminescence and vertical photocurrent spectroscopy. This leads to a photodetector with two response peaks at 55 and 253 meV due to interdot and dot-continuum transitions. Two samples are used for the investigations: one without and one with AlAs barriers between the dot layers to restrict the vertical current. These barriers have a strong influence oil the signal height Of the room temperature photoluminescence. They make-due to the lower dark current and lower noise-the interdot transitions visible in photocurrent spectroscopy and increase the dot-continuum photocurrent energy by the amount of the first miniband energy level of the AlAs GaAs superlattice. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：190 / 193
页数：4
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