Photoconductive response of InAs/GaAs quantum dot stacks

被引：7

作者：

Hofer, S ^{[1
]}

Hirner, H ^{[1
]}

Bratschitsch, R ^{[1
]}

Strasser, G ^{[1
]}

Unterrainer, K ^{[1
]}

机构：

[1] Vienna Tech Univ, Inst Festkorperelektron, A-1040 Vienna, Austria

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期

关键词：

InAs/GaAs quantum dot stacks; photoluminescence spectroscopy; photocurrent spectroscopy; photodetector;

D O I：

10.1016/S1386-9477(01)00517-3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigate the energy levels of self-assembled InAs GaAs quantum (lot stacks by photoluminescence and vertical photocurrent spectroscopy. This leads to a photodetector with two response peaks at 55 and 253 meV due to interdot and dot-continuum transitions. Two samples are used for the investigations: one without and one with AlAs barriers between the dot layers to restrict the vertical current. These barriers have a strong influence oil the signal height Of the room temperature photoluminescence. They make-due to the lower dark current and lower noise-the interdot transitions visible in photocurrent spectroscopy and increase the dot-continuum photocurrent energy by the amount of the first miniband energy level of the AlAs GaAs superlattice. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：190 / 193

页数：4

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