HIGH DYNAMIC RANGE CMOS-MEMS CAPACITIVE ACCELEROMETER ARRAY

被引：0

作者：

Guney, Metin G. ^{[1
]}

Li, Xiaoliang ^{[1
]}

Chung, Pey J. ^{[1
]}

Paramesh, Jeyanandh ^{[1
]}

Mukherjee, Tamal ^{[1
]}

Fedder, Gary K. ^{[1
,2
]}

机构：

[1] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

[2] Carnegie Mellon Univ, Inst Robot, Pittsburgh, PA 15213 USA

来源：

2018 IEEE MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) | 2018年

关键词：

SENSORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the design and characterization of a high-g CMOS-MEMS capacitive accelerometer array with 92 mG bias stability and +/- 50 kG designed input range with a validated 91 dB dynamic range. The on-chip integration of the read-out circuitry and the MEMS transducer minimizes sense-node parasitic capacitance, hence improving sensitivity and dynamic range. The small size and mass of individual accelerometer cells ensure high-g survivability. Averaging the signals from the accelerometer cells across the array improves the signal to noise ratio, hence improving the dynamic range.

引用

页码：992 / 995

页数：4

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