A Novel Trench Shielded MOSFET with Buried Field Ring for Tunable Switching and Improved Ruggedness

被引：0

作者：

Guan, Lingpeng ^{[1
]}

Bobde, Madhur ^{[1
]}

Padmanabhan, Karthik ^{[1
]}

Yilmaz, Hamza ^{[1
]}

Bhalla, Anup ^{[2
]}

Zhang, Lei ^{[1
]}

Chiu, Allan ^{[1
]}

Kim, Jongoh ^{[1
]}

Li, Wenjun ^{[1
]}

机构：

[1] Alpha & Omega Semicond, 475 Oakmead Pkwy, Sunnyvale, CA 94085 USA

[2] United Silicon Carbide, Monmouth Jct, NJ 08852 USA

来源：

2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD) | 2015年

关键词：

Superjunction; MOSFET; Trench; UIS; High Voltage; Efficiency;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, a novel trench shielded 600V MOSFET with buried field ring is proposed and demonstrated. The proposed structure achieves an active area die shrink of 35-55% compared to a conventional 600V planar MOSFET. Furthermore, it almost doubles the Unclamped Inductive Switching (UIS) rated current and improves 0.3% of the efficiency compared to the Superjunction device. It also shows better diode reverse recovery performance than Superjunction device.

引用

页码：401 / 404

页数：4

共 44 条

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