Fabrication and Infrared Optical Properties of Nano Vanadium Dioxide Thin Films

被引：9

作者：

Liang Ji-Ran ^{[1
]}

Hu Ming ^{[1
]}

Wang Xiao-Dong ^{[2
]}

Li Gui-Ke ^{[3
]}

Ji An ^{[2
]}

Yang Fu-Hua ^{[2
]}

Liu Jian ^{[3
]}

Wu Nan-Jian ^{[3
]}

Chen Hong-Da ^{[4
]}

机构：

[1] Tianjin Univ, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[4] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

ACTA PHYSICO-CHIMICA SINICA | 2009年 / 25卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Dual ion beam sputtering; Nano-vanadium dioxide thin film; Transmission; VO2; FILMS; TRANSITION; TEMPERATURE;

D O I：

10.3866/PKU.WHXB20090749

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Vanadium dioxide thin films were fabricated by ion beam sputtering on Si3N4/SiO2/Si after a post reductive annealing process in a nitrogen atmosphere. X-ray Diffraction (XRD), scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS) were employed to analyze the effects of post annealing temperature on crystallinity, morphology, and composition of the vanadium oxide thin films. Transmission properties of vanadium dioxide thin films were measured by Fourier transform-infrared (FT-IR) spectroscopy. The results showed that the as-deposited vanadium oxide thin films were composed of non-crystalline V2O5 and a tetragonal rutile VO2. After annealing at 400 degrees C for 2 h, the mixed phase vanadium oxide (VOx) thin film changed its composition and structure to VO2 and had a (011) oriented monoclinic rutile structure. When increasing the temperature to 450 degrees C, nano VO2 thin films with smaller grains were obtained. FT-IR results showed that the transmission contrast factor of the nano VO2 thin film was more than 0.99 and the transmission of smaller grain nano VO2 thin film was near zero at its switched state. Nano VO2 thin film with smaller grains is an ideal material for application in optical switching devices.

引用

页码：1523 / 1529

页数：7

共 32 条

[21] VO2 thin films deposited on silicon substrates from V2O5 target:: Limits in optical switching properties and modeling
Saitzek, Sebastien
Guinneton, Frederic
Guirleo, Guillaume
Sauques, Laurent
Aguir, Khalifa
Gavarri, Jean-Raymond
[J]. THIN SOLID FILMS, 2008, 516 (06) : 891 - 897
[22] Shen N, 2006, J INFRARED MILLIM W, V25, P199
[23] In-situ FTIR studies of the growth of vanadium dioxide coatings on glass by atmospheric pressure chemical vapour deposition forVCl4 and H2O system
Vemardou, D.
Pemble, M. E.
Sheel, D. W.
[J]. THIN SOLID FILMS, 2007, 515 (24) : 8768 - 8770
[24] Fabrication and characterization of nanocrystalline VO2 thin films
Wang, HC
Yi, XJ
Lai, JJ
Li, Y
[J]. CHINESE PHYSICS LETTERS, 2005, 22 (07) : 1746 - 1748
[25] Preparation of homogeneous VOX thin films by ion beam sputtering and annealing process
Wang, SB
Zhou, SB
Yi, XJ
[J]. VACUUM, 2004, 75 (01) : 85 - 90
[26] Thickness dependence of optical properties of VO2 thin films epitaxially grown on sapphire (0001)
Xu, G
Jin, P
Tazawa, M
Yoshimura, K
[J]. APPLIED SURFACE SCIENCE, 2005, 244 (1-4) : 449 - 452
[27] YANG BC, 1994, PHYS TECHNOLOGY THIN, P100
[28] Microstructure, nano-mechanical and temperature sensitive properties of VOx/porous silicon/Si structure
Yang Hai-Bo
Hu Ming
Liang Ji-Ran
Zhang Xu-Rui
Liu Zhi-Gang
[J]. ACTA PHYSICO-CHIMICA SINICA, 2008, 24 (06) : 1017 - 1022
[29] Structural and electrochemical properties of vanadium oxide thin films grown by d.c. and r.f. reactive sputtering at room temperature
Yoon, YS
Kim, JS
Choi, SH
[J]. THIN SOLID FILMS, 2004, 460 (1-2) : 41 - 47
[30] Switching property of sol-gel vanadium oxide thin films
Yuan, NY
Li, JH
Lin, CL
[J]. ACTA PHYSICA SINICA, 2002, 51 (04) : 852 - 856

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