High piezoelectricity of Pb(Zr,Ti)O3-based ternary compound thin films on silicon substrates

被引：14

作者：

Zhang, Tao ^{[1
]}

Wasa, Kiyotaka ^{[1
,2
]}

Zhang, Shu-yi ^{[1
]}

Chen, Zhao-jiang ^{[1
]}

Zhou, Feng-mei ^{[1
]}

Zhang, Zhong-ning ^{[1
]}

Yang, Yue-tao ^{[1
]}

机构：

[1] Nanjing Univ, Inst Acoust, Lab Modern Acoust, Nanjing 210093, Peoples R China

[2] Kyoto Univ, Dept Microengn, Kyoto 6068501, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 12期

基金：

中国国家自然科学基金;

关键词：

ferroelectricity; lead compounds; piezoelectric thin films; piezoelectricity; sputter deposition;

D O I：

10.1063/1.3103553

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pb(Zr,Ti)O-3 (PZT)-based ternary compound thin films, 0.06PMnN-0.94PZT(50/50) (PMnN-PZT), are deposited on Si-based heterostructures by rf magnetron sputtering system. The intrinsic PZT(50/50) thin films are also deposited on the same kind of substrates for comparison. The PMnN-PZT thin films show the similar polycrystalline structures as those of PZT with highly (111) oriented perovskite phase. The PMnN-PZT thin films show excellent piezoelectricity and ferroelectricity which are distinctly better than those of PZT thin films prepared with the same deposition conditions. Besides, the cantilevers of PMnN-PZT thin films on the heterostructure substrates also exhibit higher sensitivities than the PZT thin film cantilevers.

引用

页数：3

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