Formation of Ti and TiN ultra-thin films on Si by ion beam sputter deposition

被引：6
|
作者：
Styervoyedov, A.
Farenik, V.
机构：
[1] MES, Sci Ctr Phys Technol, UA-61022 Kharkov, Ukraine
[2] VN Karazin Kharkiv Natl UNiv, UA-61077 Kharkov, Ukraine
来源：
SURFACE SCIENCE | 2006年 / 600卷 / 18期
关键词：
titanium; titanium nitride; sputter deposition; x-ray photoelectron spectroscopy (XPS);
D O I：
10.1016/j.susc.2006.01.080
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ultra-thin titanium and titanium nitride films on silicon substrate were obtained by ion beam sputtering of titanium target in vacuum and nitrogen atmosphere, using argon ions with energy of 5 keV and 15 mu A target current. Elemental composition and chemical state of obtained films were investigated by X-ray photoelectron spectroscopy with using Mg-K alpha X-ray radiation (photon energy 1253.6 eV). It was shown that it is possible to form both ultra-thin titanium films (sputtering in vacuum) and ultra-thin titanium nitride films (sputtering in nitrogen atmosphere) in the same temperature conditions. Photoelectron spectra of samples surface, obtained in different steps of films synthesis, detailed spectra of photoelectron emission from Si 2p, Ti 2p, N 1s core levels and also X-ray photoelectron spectra of Auger electrons emission are presented. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：3766 / 3769
页数：4
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