Monolithic, Sb-based Electrically pumped VCSELs emitting at 2.3 μm

被引：0
|
作者：
Ducanchez, A. [1 ]
Cerutti, L. [1 ]
Garnache, A. [1 ]
Genty, F. [1 ]
机构：
[1] Univ Montpellier 2, IES, CNRS, UMR 5214, F-34095 Montpellier, France
来源：
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年
关键词：
VCSELs; Mid-Infrared; antimonide semiconductors;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Demonstration of a 2.3 mu m emission at room temperature under quasi continuous-wave operation from a Sb-based monolithic Vertical Cavity surface emitting laser is reported. The structure is composed of 2 n-doped AlAsSb/GaSb distributed Bragg reflectors, a type-I GaInAsSb/AlGaAsSb multi quantum well active region and a tunnel junction. For 80 mu m diameter devices, density threshold of 0.8 kA/cm(2) at RT is achieved
引用
收藏
页码：228 / 230
页数：3
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